| 摘要 |
PROBLEM TO BE SOLVED: To provide surface emission semiconductor laser equipment which suppresses problems even in an environment of high temperature and high humidity, and ensures a long product cycle. SOLUTION: VCSEL 100 has on a substrate 102 a semiconductor layer comprising an n-type buffer layer 104, an n-type lower layer DBR 106, an active area 108, a current strictured layer 110, a p-type upper layer DBR 112, and a p-type GaAs contact layer 114. A laser beam emission post P and a pad formation area 118 are separated by a groove 116 formed on the semiconductor layer. In addition, the outer boarder of the pad formation area 118 is provided with a peripheral groove 140 having a depth to the substrate through semiconductor bath etching, and the side and surface (contact layer 114) exposed in the pad formation area by the peripheral groove 140 are covered by an interlayer insulating film 120. COPYRIGHT: (C)2007,JPO&INPIT
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