| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a full silicide gate electrode of a uniform metal composition ratio, even if a gate length is different capable of easily controlling the metal composition ratio, and to provide its manufacturing method. SOLUTION: Polysilicon gate electrodes 9, 29 each with different gate length have equal height of upper ends thereof, the height being lower than that of a side wall 20. After a metal film 8 is formed to cover the polysilicon gate electrodes 9, 29, it is made silicide by a heat treatment. The height of the upper end of the polysilicon gate electrode 21 is formed to be lower than the height of the upper end of the side wall 20, so that silicide reaction is not accelerated even with a fine gate length and advances one dimensionally. As a result, a full silicide gate electrode of a uniform metal composition ratio can be stably formed even with the polysilicon gate electrodes 9, 29 of different gate lengths. COPYRIGHT: (C)2007,JPO&INPIT
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