发明名称 SEMICONDUCTOR CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a high reliability semiconductor circuit for preventing two terminals from short circuiting, when a capacitance element provided between the two terminals suffers from a failure such as dielectric breakdown to make electrodes of the capacitance element conductive therebetween. SOLUTION: The semiconductor circuit 1 includes the capacitance element 10 and a short circuit prevention circuit 20. The capacitance element 10 is provided in a path extending between the terminal 92 (first terminal) and the second terminal 94 (second terminal). First potential is applied to the terminal 92, and second potential lower than the first potential is applied to the one terminal 94. A short circuit prevention circuit 20 is also provided in the path between the terminal 92 and the terminal 94. The short circuit prevention circuit 20 is connected in series with the capacitance element 10. The short circuit prevention circuit 20 is conductive when the electrodes 12, 14 of the capacitance element 10 are in an insulated state, while it is in an insulated state when the electrodes 12, 14 of the capacitance element 10 are in a conductive state. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007173339(A) 申请公布日期 2007.07.05
申请号 JP20050365756 申请日期 2005.12.20
申请人 NEC ELECTRONICS CORP 发明人 WATANABE EIICHIRO;NAKAHARA YASUSHI
分类号 H01L21/822;H01L27/04;H03K19/003 主分类号 H01L21/822
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