| 摘要 |
PROBLEM TO BE SOLVED: To provide: a semiconductor substrate capable of forming a stable gettering site in a semiconductor substrate surface by removing a variation factor of ion range, and of growing an epitaxial layer of good quality on the surface; method of manufacturing the semiconductor substrate; a semiconductor device such as a CPU (central processing unit) for example, solid-state imaging element using the semiconductor substrate; and to provide a method of manufacturing the semiconductor device. SOLUTION: The method of manufacturing the semiconductor substrate 10 implements ion implantation from a surface side of an original semiconductor substrate 1 to form a uniform high density gettering site 2 at a predetermined depth of the semiconductor substrate 1. In the method, the ion implantation is implemented from a substrate mirror surface where no oxide film is existent in order to improve controllability in a substrate depthwise direction during the ion implantation, and impurities on the substrate surface side are removed by a low temperature heat treatment in an oxidized gas atmosphere before epitaxial growth after the ion implantation. Further, a non-defect layer 3 is formed on the substrate surface side in a non-oxidized gas atmosphere by a high temperature heat treatment, and the high density gettering site 2 is formed. Finally, a thermal oxide film formed by the heat treatment is removed after the heat treatment. COPYRIGHT: (C)2007,JPO&INPIT
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