| 摘要 |
PROBLEM TO BE SOLVED: To obtain a highly reliable semiconductor laser device by reducing a temperature rise at an end face relative to a central part of a resonator without causing dispersion of metal elements from a pad electrode. SOLUTION: The semiconductor laser device has a semiconductor laminated body 120 which has a current injection region composed of a stripe 109a formed above an active layer 105, a p-side ohmic electrode 141 formed on the semiconductor laminated body 120 so as to cover the stripe 109a, and the pad electrode 143 electrically connected with the p-side ohmic electrode 141 on the semiconductor laminated body 120. The semiconductor laminated body 120 includes the active layer 105, and is formed almost perpendicularly to the longitudinal direction of the stripe 109a while having the resonator provided with a pair of cleavage faces 160 arranged oppositely to each other. The pad electrode 143 is formed in a region excluding the upper side of the stripe 109a. COPYRIGHT: (C)2007,JPO&INPIT
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