发明名称 |
Complementary metal oxide silicon image sensor and method of fabricating the same |
摘要 |
Disclosed is a method of fabricating a CMOS (Complementary Metal Oxide Silicon) image sensor. The method includes the steps of: forming a device protective layer and a metal interconnection on a substrate formed with a light receiving device; forming an inner micro-lens on the metal interconnection; coating an interlayer dielectric layer on the inner micro-lens and then forming a color filter; and forming an outer micro-lens including a planarization layer and photoresist on the color filter. The inner micro-lens is formed by depositing the outer layer on dome-shaped photoresist. The curvature radius of the inner micro-lens is precisely and uniformly maintained and the inner micro-lens is easily formed while improving the light efficiency. Since the fabrication process for the CMOS image sensor is simplified, the product yield is improved and the manufacturing cost is reduced.
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申请公布号 |
US2007152246(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20060646644 |
申请日期 |
2006.12.27 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
IM KI SIK |
分类号 |
H01L31/062;H01L21/00 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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