发明名称 |
Method for fabricating flash memory device |
摘要 |
A method for fabricating a flash memory device includes the steps of forming a buffer film on a semiconductor substrate having a defined active region; controlling a threshold voltage of a memory cell by ion-implanting dopants into the active region of the substrate under the buffer film; removing the buffer film by performing a wet-cleaning process whose target thickness is about 1 to about 1.5 times the buffer film thickness; and forming a tunnel dielectric film on the active region of the exposed substrate after the buffer film is removed.
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申请公布号 |
US2007155097(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20060641793 |
申请日期 |
2006.12.20 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
YUNE JI HYUNG;SHIN YOUNG WOOK |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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