METHOD FOR MAKING A PLATE-LIKE DETACHABLE STRUCTURE, IN PARTICULAR MADE OF SILICON, AND USE OF SAID METHOD

摘要

The invention concerns a method for making a plate-like structure comprising at least one substrate (3), one superstrate (5) and at least one intermediate layer (4) interposed between the substrate and the superstrate, which consists in: forming on the substrate, at least one intermediate layer comprising at least one base material wherein are dispersed so-called extrinsic atoms or molecules, different from the atoms or molecules of the base material, so as to constitute a substructure (2); applying to said substructure (2) a basic heat treatment such that, in the temperature range of said heat treatment, the presence of selected extrinsic atoms or molecules in the selected base material generates a structural transformation of said intermediate layer; and assembling a superstrate (5) on said heat-treated intermediate layer (4), so as to obtain said plate-like structure (1). The method is useful for making detachable semiconductor structures.