CVD APPARATUS AND METHOD OF FORMING THIN FILM WITH THE SAME

摘要

A CVD apparatus with which a thin film of a composite metal oxide containing CuS can be formed, and a method of forming the thin film. The apparatus has: an orifice tube (3) connected to a piping (2) for a carrier gas; a fine hole (4) formed at the tip of the orifice tube (3); a metal-compound solution piping (5) through which a metal-compound solution is directly fed to the orifice tube (3); a copper-compound solution piping (6) through which a copper-compound solution is directly fed to the orifice tube (3); a vaporization tube (11) disposed in front of the tip of the fine hole (4); and a reaction chamber (12) which is connected to the vaporization tube (11) and to which a sulfurized compound vaporized is fed. It is characterized by having a constitution in which the metal compound and copper compound vaporized are fed to the reaction chamber (12) the inside of which is kept having an oxygen atmosphere of 400-850°C to thereby form a (metal oxide + CuO) film on the substrate and the sulfurized compound vaporized is fed to alter the (metal oxide + CuO) film into a thin (metal oxide + CuS) film.