| 摘要 |
PROBLEM TO BE SOLVED: To obtain excellent heat-dissipation performance while preventing the generation of warpage and cracks caused by thermal stress. SOLUTION: A semiconductor module is composed by joining a heat sink to a rear metal plate 16 after joining a front metal plate and the rear metal plate 16, respectively, to the front face and the rear face of a ceramic substrate. The thermal stress caused by thermal expansion and thermal contraction is reduced by providing a non-joining region which is composed of recesses 18 recessed in the thickness direction of the rear metal plate 16 in the rear metal plate 16. The recesses 18 (the non-joining region) are formed so that an area of a joining region of the rear metal plate 16 is within a range of 65-85% of the entire area of the joining face 16b of the rear metal plate 16. COPYRIGHT: (C)2007,JPO&INPIT |
