| 摘要 |
PROBLEM TO BE SOLVED: To make compatible high breakdown strength and low on-resistance in a high electron mobility transistor. SOLUTION: The high electron mobility transistor 1 comprises a drain electrode 5 and a source electrode 6 which have high breakdown strength GaN layer 3 and an AlGaN layer 4 formed sequentially on a semi-insulating substrate 2, removes both ends of the GaN layer 3 and the AlGaN layer 4, and comes into contact with both layers from the GaN layer 3 to the AlGaN layer 4. This can reduce the resistance of a current path by a secondary electron gas 8 generated near a contact surface with the AlGaN layer 4 in the GaN layer 3, and resistance between a drain and a source by the reduction of the resistance of the current path between the respective electrodes 5, 6 and the secondary electron gas 8, thereby making compatible the high breakdown strength and the low on-resistance. COPYRIGHT: (C)2007,JPO&INPIT
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