发明名称 THERMAL TYPE INFRARED SENSING DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a thermal type infrared sensing device capable of achieving compactness and low costs and provide its manufacturing method. SOLUTION: The thermal type infrared sensing device includes both a thermal type infrared sensing element 1 which is formed through the use of a first wafer (silicon wafer) and in which an infrared sensing part 13 thermally insulated from its surroundings on the side of one surface and a package 2 sealed in such a way as to surround the infrared sensing part 13 on the side of the one surface of the thermal type infrared sensing element 1. The package 2 is formed through the use of a second wafer (silicon wafer). Through hole wirings 15a and 15c electrically connected to the infrared sensing part 13 are formed in the thermal type infrared sensing element 1. The outside dimensions of the thermal type infrared sensing element 1 and the package 2 are identical. A semiconductor lens part 22 made of part of the second wafer is integrally formed in the package 2. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007171174(A) 申请公布日期 2007.07.05
申请号 JP20060334975 申请日期 2006.12.12
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 HONDA YOSHIAKI;NISHIKAWA NAOYUKI
分类号 G01J1/02;G01J1/04;H01L37/00 主分类号 G01J1/02
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