| 摘要 |
PROBLEM TO BE SOLVED: To provide a composition for depositing a ruthenium film capable of shortening the incubation time when depositing the ruthenium film by using bis-(ethylcyclopentadienyl) in a chemical vapor growth method. SOLUTION: A composition with ruthenium compound of≥0.01 mol.% and≤5 mol.% to be thermally decomposed at the temperature of≥120°C and≤240°C added to and dissolved in bis-(ethylcyclopentadienyl) ruthenium is used for a raw material for depositing a ruthenium film by the chemical vapor growth method. COPYRIGHT: (C)2007,JPO&INPIT
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