| 发明名称 |
Photoresist composition for deep ultraviolet lithography |
| 摘要 |
The present invention relates to a photoresist composition comprising a photoacid generator and at least one polymer comprising at least one unit as described by structure 1, The invention also relates to a process for imaging the photoresist composition of the present invention, and to a process of making the polymer in the presence of an organic base.
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| 申请公布号 |
US2007154841(A1) |
申请公布日期 |
2007.07.05 |
| 申请号 |
US20070716361 |
申请日期 |
2007.03.09 |
| 申请人 |
DAMMEL RALPH R;SAKAMURI RAJ;HOULIHAN FRANCIS M |
发明人 |
DAMMEL RALPH R.;SAKAMURI RAJ;HOULIHAN FRANCIS M. |
| 分类号 |
G03C1/00;G03F7/004;G03F7/039 |
主分类号 |
G03C1/00 |
| 代理机构 |
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