| 摘要 |
Disclosed are a metal interconnection of a semiconductor device and a method for manufacturing the same, capable of improving the reliability of the semiconductor device. The metal interconnection of the semiconductor device includes a first metal interconnection formed on a semiconductor substrate; an interlayer dielectric layer formed on the semiconductor substrate including the first metal interconnection, the interlayer dielectric layer being selectively removed to form a via hole and a trench on the via hole; a metal diffusion blocking layer formed in the via hole and the trench formed on the via hole; a second metal interconnection buried in the via hole and the trench below a top portion of the metal diffusion blocking layer; and a protection layer covering the interlayer dielectric layer, the metal diffusion blocking layer, and the second metal interconnection.
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