GALLIUM NITRIDE CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR DISCRIMINATING GALLIUM NITRIDE CRYSTAL SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a GaN crystal substrate that can decrease cracks and breakage in the GaN crystal substrate during manufacturing a semiconductor device, to provide a semiconductor device having the substrate, a method for manufacturing the semiconductor device and a method for discriminating the GaN crystal substrate.

SOLUTION: The GaN crystal substrate has a surface area of 10 cm2or more, wherein a region on the surface of the GaN crystal substrate excluding a region from the peripheral edge to 5 mm inside shows 0.5 cm-1or less difference between the maximum and the minimum of Raman shift corresponding to a E2Hphonon mode. The present invention also provides a semiconductor device including the above substrate, a method for manufacturing the semiconductor device and a method for discriminating the GaN crystal substrate.

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