| 摘要 |
<P>PROBLEM TO BE SOLVED: To apply a high voltage temporarily to the gate of a switching device when the device is turned ON or OFF to enable a mirror period near a threshold voltage to pass away at a high speed so as to turn the device ON or OFF quickly and to enable an adequate bias voltage to be applied to the gate of the device while it is kept ON or OFF. <P>SOLUTION: A high-speed gate drive circuit is equipped with an ON-holding power supply 1 whose voltage is within the rated gate voltage of the switching device, a turn-ON power supply 2 whose voltage is above the rated gate voltage, and a turn-ON capacitor 7 which is charged with the turn-ON power supply 2. The turn-ON capacitor 7 which is charged up to just before a turn-ON voltage is released from the turn-ON power supply 2, the electric charge of the turn-ON capacitor 7 is applied to the gate of the semiconductor switching device to turn it ON at a high-speed, and the switching device is kept in an ON-state by the ON-holding power supply 1 after the device is turned ON. <P>COPYRIGHT: (C)2007,JPO&INPIT |
