发明名称 |
Thin ito films and method of producing the same |
摘要 |
A novel thin ITO film formed on a substrate and containing Sn at a concentration of 0.6 to 2.8 atomic %. The thin ITO film can be used as a transparent electrically conducting film. A method of producing the thin ITO film includes a step of spraying a mixed solution of an indium salt and a tin salt onto a substrate left in the atmosphere. A stannous chloride is used as the tin salt and an alcohol solution is used as the solution. The thin ITO film of a low Sn concentration (0.6, 1.3 or 2.8 atomic %) exhibits a markedly decreased absorption coefficient in a long wavelength region (lambda≈500 to 1000 nm). The thin ITO film realizes a low resistivity (about 1.7x10<SUP>-4 </SUP>Omega.cm).
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申请公布号 |
US2007154629(A1) |
申请公布日期 |
2007.07.05 |
申请号 |
US20040569637 |
申请日期 |
2004.08.26 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
FUJITA YASUHIKO |
分类号 |
B05D5/12;B32B17/06;C01G19/00;C03C17/25 |
主分类号 |
B05D5/12 |
代理机构 |
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地址 |
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