APPARATUS FOR GROWING SINGLE CRYSTAL AND METHOD FOR GROWING SINGLE CRYSTAL

摘要

An apparatus for growing a single crystal is provided to prevent formation of polycrystal and grow a silicon carbide single crystal having a uniform content of impurities by independently controlling heating and supplying of a single crystalline material and impurities. A seed(30) and a single crystalline material are prepared in a single crystalline material crucible(10). An impurity crucible(40) in which impurities are prepared is connected to the single crystalline material crucible. First and second heating units are respectively installed outside the single crystalline material crucible and the impurity crucible. The first and second heating units are independently operated, separated from each other by a predetermined interval and including RF induction coils(90,100). Impurity gas is transferred form the impurity crucible to the single crystalline material crucible by an impurity gas supplying pipe(50).