| 摘要 |
A method for forming a recess gate in a semiconductor device is provided to improve a process margin by forming a neck part of a bulb-type recess gate region by an epitaxial growth method after a body part of the bulb-type recess gate region is formed. A semiconductor substrate(100) is partially etched to form a body part(160) of a bulb-type recess gate region(120). A nitride material is filled in the recess gate region. A predetermined thickness of the upper part of the nitride material is etched to expose the upper part of the sidewall of the recess gate region. The surface of the semiconductor substrate is epitaxially grown wherein an overhang is generated in the upper part of the recess gate region so that the overhang part becomes a neck part(150) of the recess gate region. The nitride material is removed and a gate is formed in the bulb-type recess gate region.
|
