IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME

摘要

An image sensor is provided to block the light incident upon a peripheral region except a photodiode region by selectively forming a silicide layer on the upper surface of a source/drain region except the photodiode region and the upper surface of a gate electrode. A plurality of gate electrodes for a transistor are formed on a substrate in which an active region and a filed region are defined. A silicide layer(47) is formed on the upper surface of the substrate in the active region except a photodiode region for forming a photodiode(PD) and the upper surface of the gate electrode.