APPARATUS FOR ION IMPLANTATION AND METHOD FOR ION IMPLANTATION USING THEREOF

摘要

An ion implanting apparatus and an implanting method using the same are provided to obtain the uniformity of ion implantation by mixing an inactive gas with a source gas which is supplied into a gas bottle so as to stabilize the plasma when lacking the source gas for obtaining more little ion beam current, so that the electrical property of device can be prevented. An ion implanting apparatus comprises the followings: a source part(100) for obtaining an ion beam through a gas supplied from a gas bottle(170); an analyzing part(110) connected with the ion source part for distinguishing the ion beams from the ion source; a beam focusing part(120) connected with the analyzing part; a deflecting part(130) connected with the beam focusing part to perform implantation toward the X axis direction; a lens part(140) connected with the deflecting part for changing an angle of the ion beam; an accelerating part(150) connected with the lens part for controlling the depth of ion implantation by accelerating the ion beam; a final sensing part(160) for sensing the ion beam passing the accelerating part. The ion source part is constituted with a mixed gas of a source gas and an inactive gas.