发明名称 |
Air-gap type FBAR, method for fabricating the same, and filter and duplexer using the same |
摘要 |
An air-gap type thin film bulk acoustic resonator (FBAR) and method for fabricating the same. Also disclosed are a filter and a duplexer employing the air-gap type FBAR. The air-gap type FBAR includes: a first substrate (200) having a cavity part (210) at a predetermined region on its upper surface; a dielectric film stacked on the upper part of the first substrate; a first air gap formed between the first substrate and the dielectric film (220); a stacked resonance part (230) including a lower electrode/piezoelectric layer/upper electrode formed on the upper part of the dielectric film; a second substrate (240) having a cavity part at a predetermined region on its lower surface and joined to the first substrate; and a second air gap (250) formed between the stacked resonance part and the second substrate. A thin film of predetermined thickness made of a liquid crystal polymer (LCP) may be used as the dielectric film. |
申请公布号 |
EP1523097(A3) |
申请公布日期 |
2007.07.04 |
申请号 |
EP20040255782 |
申请日期 |
2004.09.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SONG, IN-SANG;HA, BYEOUNG-JU;HWANG, JUN-SIK;PARK, YUN-KWON |
分类号 |
H01L41/09;H03H3/02;H01L41/08;H01L41/18;H03H9/10;H03H9/17;H03H9/24;H03H9/58;H03H9/70 |
主分类号 |
H01L41/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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