Elongate nanostructure semiconductor device

摘要

The invention discloses the creation of elongate nanostructure semiconductor devices comprising at least a first and second device structure on top of one another, of which at least the first is a transistor structure and at least the second is a nanostructure device structure comprising a vertical elongate nanostructure (20). For the application in e.g. a field-effect-transistor the at least one elongate nanostructure (20) forms the channel of the field-effect transistor. The present invention furthermore provides a method whereby the vertical growth of elongate nanostructures is used to fabricate a vertical elongate nanostructure semiconductor device, e.g. a vertical surround-gate elongate nanostructure field-effect-transistor, according to the present invention. Also several possible devices are disclosed which comprise vertical stacks of device structures, of which at least the first is a transistor structure and at least the second is an elongate nanostructure device structure comprising a vertical elongate nanostructure (20).