| 摘要 |
A thin film transistor array substrate and a method for manufacturing the same are provided to decrease the number of masks, thereby simplifying the manufacturing process of the thin film transistor array substrate, by simultaneously forming a gate line, common electrodes, and pixel electrodes through only one mask. A transparent conductive layer and a gate metal layer are sequentially deposited on a substrate. The gate metal layer and the transparent conductive layer are selectively removed by using a first mask, thereby forming a gate line(101), a gate pad, a common line, common electrodes diverged from the common line, and pixel electrodes formed alternately with the common electrodes. A gate insulating layer(107a), a semiconductor layer, and a data metal layer are sequentially deposited on the resultant substrate, and selectively removed by using a second mask. A source/drain metal layer is deposited on the resultant substrate on the resultant substrate. The source/drain metal layer and the semiconductor layer are selectively removed by using a third mask, thereby forming a data line(102), a source electrode(102a), a drain electrode(102b), a data pad, and a semiconductor pattern. |
