| 摘要 |
A method for fabricating an MIM capacitor is provided to increase the capacitance of a capacitor by reducing a leakage current. A first metal layer(22), a first insulation layer(24) and a second metal layer(26) are sequentially stacked on a silicon substrate. The first insulation layer and the second metal layer are sequentially etched to form a first capacitor. A second insulation layer(28) and a third metal layer(30) are sequentially formed on the first capacitor. The second insulation layer and the third metal layer are selectively etched to form a second capacitor having a metal-insulator-metal structure. An oxide layer is formed on the third metal layer. The second and third metal layers use a titanium/titanium nitride layer. The first and second insulation layer use one of a nitride layer or an oxide layer.
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