| 摘要 |
A CMOS image sensor and its manufacturing method are provided to prevent an incident light from penetrating a semiconductor structure including metal lines by illuminating directly a backside of a substrate in which photodiode is formed, thereby restraining image loss, reduction of a light transmitting ratio and noise generation. A photodiode(25) is formed on a substrate(20b). A semiconductor construction layer includes a gate electrode for transistors, a plurality of metal lines and a plurality of interlayer dielectrics for insulating the metal lines. A passivation layer is formed to protect the semiconductor construction layer. An adhesive layer(29) is formed on the passivation layer. A glass substrate(30) is formed on the adhesive layer. A color filter(33) is formed on the backside of the substrate.
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