发明名称 MOLYBDENUM SPUTTERING TARGETS
摘要 Tubular molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m X 5.5 m. The thin films can be used in electronic components such as Thin Film Transistor - Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emission Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.
申请公布号 IL181454(D0) 申请公布日期 2007.07.04
申请号 IL20070181454 申请日期 2007.02.20
申请人 H.C. STARCK INC. 发明人
分类号 C22C 主分类号 C22C
代理机构 代理人
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