| 摘要 |
An exposure mask for a bit line of a semiconductor device and a method for forming the semiconductor device are provided to reduce an efficient value of bit line resistance and to improve R/C characteristics in bit line data sensing by using a light shielding pattern including a linear structure with nodes. An exposure mask includes a quartz substrate and a light shielding pattern. The light shielding pattern is formed on the quartz substrate. The light shielding pattern includes a linear structure with a plurality of nodes. A bit line(110) for contacting a bit line contact plug is formed on a first interlayer dielectric by using the exposure mask, so that the bit line includes a node line structure.
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