| 摘要 |
A method for fabricating a semiconductor device is provided to reduce junction overlap to a portion under a gate by a spacer formed on the gate and its sidewall in an LDD ion implantation process by forming an LDD region by a low-density ion implantation process. A gate electrode is formed on a semiconductor substrate(201). After a first insulation layer is formed on the resultant structure, the first insulation layer is etched to form a first spacer on the sidewall of the gate electrode. The first spacer can be made of an oxide layer. Low-density ions are implanted into the semiconductor substrate having the first spacer to form an LDD region overlapping the first spacer. After a second insulation layer is formed on the resultant structure, the second insulation layer is etched to form a second spacer on the sidewall of the first spacer. High-density ions are implanted into the semiconductor substrate having the second spacer to form a source/drain region in the LDD region. A gate insulation layer and a conductive layer are sequentially formed on the semiconductor substrate. The gate insulation layer can be formed by a thermal oxide process of a CVD method.
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