RECESS GATE TRANSISTOR STRUCTURE AND MANUFACTURING FORMING METHOD THEREOF

摘要

A semiconductor device having a recess gate is provided to improve a punch-through margin by increasing a channel length as compared with a conventional semiconductor device of a planar gate type. A semiconductor substrate(100) of inverse triangular type is prepared. A gate insulation layer(131) of a predetermined thickness is formed on the semiconductor substrate. A gate electrode(130) is formed on the gate insulation layer, filling the inverse triangular type and protruding to the surface of the semiconductor substrate. First and second junction regions are formed on the semiconductor substrate at both sides of the gate electrode, confronting each other. The gate electrode can have a stack structure in which a gate conductive layer(132) and a gate metal layer(133) are sequentially formed.