| 摘要 |
A schottky barrier diode having improved electrical property is provided to improve a current leakage property by forming an contrary impurity region like a P-type impurity region to an anode region, and to improve forward current performance by forming an N-well in a cathode region. A first N-well is formed on a P-type substrate. A cathode includes a second N-well which is formed on the first N-well, and an N-type impurity region which is formed on the second N-well. An anode includes a P-type impurity region formed on the first N-well, and is separated from the cathode and surrounded by that. An N-type metal region is further included between the second N-well and the N-type impurity region.
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