| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the size of a device and make the device compact by improving the assembling of a two-piece IGBT module and to improve the operation characteristics by reducing the inductance of the inside wiring. <P>SOLUTION: A power semiconductor device has such an assembling structure that two sets of IGBTs 2 and 3 and FWDs 4 and 5 are mounted on a copper circuit pattern of an insulation substrate. With the IGBTs 2 and 3 being connected in series, input terminals 6 and 7 and an output terminal 8 are extracted. The insulation substrate is divided into two insulation substrates 1A and 1B; and the IGBTs 2 and 3, FWDs 4 and 5, and lead frames 11-14 for wiring are distributed into respective substrate parts, and are stacked in the vertical direction to be mounted. Then, the insulation substrates 1A and 1B are vertically arranged opposite and very close to each other. The two insulation substrates are connected via the U-shaped output terminal 8 so that electric currents in the copper circuit patterns and electric currents in the lead frames are opposite in the two insulation substrates through the input and output terminals. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
