| 摘要 |
A method for fabricating a semiconductor device is provided to remove impurities existing on the surface of a wafer by applying a positive voltage higher than the ionization energy of metal impurities to the back surface of the wafer so that the metal impurities are ionized to be positive ions and transferred to the vicinity of a negative voltage in the opposite position. A DC voltage is applied to a wafer(100) to eliminate metal impurities(110) wherein a positive voltage is applied to the back surface of the wafer and a negative voltage is applied to the upper surface of the wafer. A gate oxide layer is formed on the wafer by a thermal oxide process or a CVD process. A gate material layer is formed on the gate oxide layer.
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