| 摘要 |
A method for fabricating a metal storage node in a capacitor is provided to prevent a bridge from being formed between metal storage nodes by avoiding a growth of a foreign substance of an abnormal hemispherical type on a titanium nitride layer by residual amorphous carbon. An etch stop layer(300) is formed on an insulation layer of a semiconductor substrate(100). A mold layer of amorphous carbon is formed in the etch stop layer. The mold layer is selectively etched to form an opening hole. A metal layer(700) is extended to the inside of the opening hole, including a titanium layer(710) and a titanium nitride layer(750). The metal layer is node-separated to form a metal storage node. The residual mold layer is selectively removed. The surface of the metal storage node that comes in contact with and reacts with the carbon of the mold layer is cleaned by using BOE(buffered oxide etchant) in which the ratio of HF is 2~3 %. An annealing process is performed on the metal storage node.
|
