COPPER METALLIZATION LAYER PROTECTED BY CAPPING METAL LAYER, AND MANUFACTURING METHOD THEREOF

摘要

A copper metal line protected by a capping metal layer, and a method for manufacturing the same are provided to smoothly move electrons in the metal line by allowing an upper surface of the metal line to be protected by the capping metal layer without being in contact with a dielectric film. A damascene pattern is formed by an interlayer dielectric film(20a) on a semiconductor substrate. A barrier metal layer(16) is formed within the damascene pattern. A copper plating layer(18) is formed within the damascene pattern. The upper surface of the copper plating layer filled within the damascene pattern is lower than a surface of the interlayer dielectric film. A capping metal layer(19a) is locally formed on the copper plating layer. The capping metal layer is made of at least one of Ta, TaN, Co, CoSi2 and CoWP. Then, the whole surface of the substrate is planarized to remove a portion of the capping metal layer formed on the interlayer dielectric film.