| 摘要 |
A method for fabricating a CMOS image sensor is provided to minimize overlap capacitance between a transfer transistor and a floating diffusion region by eliminating the necessity for NM(N-type impurity ion implantation) and N-halo ion implantation process of a transfer transistor. An impurity layer of first conductivity type is formed in a region except a photodiode region(16) of a semiconductor substrate(11) in which at least one transfer transistor region and the photodiode region are defined. A gate oxide layer(14) and a gate electrode(15) are sequentially formed on the semiconductor substrate. A low density diffusion region is formed in the photodiode region and the residual transistor region except the transfer transistor region. A photodiode is formed in the photodiode region at one side of the gate electrode. A floating diffusion region(18) of second conductivity type is formed in the semiconductor substrate at the other the other side of the gate electrode except the photodiode region. A mask is formed on the resultant structure, covering the photodiode region and the transfer transistor region and opening the residual transistor region. N-type impurity halo ions are implanted by using the mask as an ion implantation barrier.
|
