| 摘要 |
A method for fabricating a high voltage transistor is provided to sufficiently and electrically isolate adjacent high voltage transistors by performing a field stop ion implantation process while ions for controlling a threshold voltage are implanted. A filed oxide layer(32) for isolation is formed in a semiconductor substrate(31) in which a high voltage transistor is to be formed. While an ion implantation process for controlling a threshold voltage is performed on the semiconductor substrate, a filed stop ion implantation process is performed on a portion under the filed oxide layer by using a mask that simultaneously opens a region for the ion implantation for controlling the threshold voltage and a region for the field stop ion implantation. A gate oxide layer is formed on the semiconductor substrate. A gate electrode is formed on the gate oxide layer. A drift region and a source/drain region are sequentially formed in the semiconductor substrate outside the gate electrode.
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