THIN FILM TRANSISTOR ARRAY SUBSTRATE AND FABRICATING METHOD THEREOF

摘要

A TFT substrate is provided to prevent an active redundancy from being formed at both side ends of an active layer and improve an aperture ratio by directly forming a data line on a gate insulation layer. A gate line(120) is formed on a substrate. A data line(130) crosses the gate line wherein the gate line and the data line are positioned at both sides of a gate insulation layer. A semiconductor pattern is composed of a gate electrode connected to the gate line, a source electrode(132) connected to the data line, a drain electrode(133) confronting the source electrode wherein the drain electrode and the source electrode are positioned at both sides of the channel, an active layer constituting the channel and an ohmic contact layer. The gate insulation layer having a TFT(140) is covered with a passivation layer. A pixel electrode(160) is connected to the drain electrode of the TFT through a contact hole penetrating the passivation layer. The data line is directly formed on the active layer without interposing the active layer. The semiconductor pattern includes an active layer for forming a channel between the source electrode and the drain electrode and an ohmic contact layer formed on the active layer such that the ohmic contact layer performs an ohmic contact of the source electrode and the drain electrode.