| 摘要 |
A method for forming metallization is provided to suppress outgas of amine component from a TiN layer by forming an oxide layer on the TiN layer, thereby preventing peeling and pattern collapse. Metal is deposited on a semiconductor substrate having a predetermined lower structure(S21). The deposited metal is annealed to form an oxide layer(S22). Then, an organic anti-reflective coating is formed on the oxide layer(S23), and deep ultraviolet photoresist is formed on the organic anti-reflective coating(S24). The oxide layer has a thickness of about 500nm to suppress outgas of amine component.
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