| 摘要 |
A method for forming a pattern in a semiconductor device is provided to simplify a forming process by adopting an oxide layer as a hard mask material which is removed at the same time when an oxide layer is etched. A first hard mask(23) of amorphous carbon is formed on a layer(22) to be etched, and then a second hard mask(24) made of a material having the same etching characteristic as that of the layer is formed on the first hard mask. A photoresist pattern(26) is formed on the second hard mask, and then the second hard mask is etched by using the photoresist pattern as an etching barrier to form a second hard mask pattern. The first hard mask is etched to form a first hard mask pattern, and then the layer is etched to form a predetermined pattern.
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