METHOD FOR FORMING FINE PHOTORESIST PATTERN IN SEMICONDUCTOR DEVICE BY USING DOUBLE EXPOSURE

摘要

A method for forming a fine photoresist pattern in a semiconductor device by using double exposure is provided to improve a wave profile to be generated at a border of an exposed portion and a non-exposed portion of photoresist through the double exposure. Photoresist(20) is applied on a substrate(10), and then is primarily exposed to light by using a first mask. A portion of the primarily exposed photoresist is secondarily exposed by using a second mask. The primarily and secondarily exposed substrate is developed, so that the double exposed portion of the photoresist is removed to form a fine spatial photoresist pattern. The first and the second masks form an isolation space pattern.