Method for manufacturing a transistor with self-aligned channel

摘要

The present invention relates to a method for manufacturing transistors comprising a control electrode and a self-aligned channel. According to the method of the present invention, the control electrode may be formed by etching a conductive layer (21) in two steps, a first step using a first mask and a second step using a second mask (25). The final pattern of the control electrode is defined by the overlap between the first and second mask (25).