| 摘要 |
A flash memory device and its manufacturing method are provided to improve the coupling ratio by forming a gate insulating layer having a ZrO2 film with high dielectric constant, and to prevent current leakage by reducing a thickness of the gate insulating layer. A flash memory device is constituted by a tunnel insulating layer, a floating gate, a gate insulating layer and a control gate laminated on a semiconductor substrate(10). The gate insulating layer is formed by one selected from a group consisting of oxide-layer(13)/ZrO2 film(14)/oxide-layer(15), oxide-layer/ZrO2 film and ZrO2 film/oxide layer. The oxide layer is made of a HTO(High Thermal Oxidation) film.
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