| 摘要 |
A method for fabricating a semiconductor device having a recess channel of a bulb type is provided to reduce an electric filed having a maximum value in a region where a junction adjoins a channel by implanting impurities with a low dosage into the region where the junction adjoins the channel. A bulb-type trench for a recess channel is formed on a semiconductor substrate(200), having a thickness of 500~2500 A. An ion implanting buffer layer is formed on the bulb-type trench for the recess channel, having a thickness of 20~250 A. A mask layer pattern is formed on the ion implanting buffer layer, exposing the bulb-type trench for the recess channel. Impurity ions are vertically implanted into the semiconductor substrate under the bulb-type trench for the recess channel by using the mask layer pattern and the ion implanting buffer layer. Impurity ions are implanted into both sides surfaces of the bulb-type trench at a tilt angle.
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