| 摘要 |
A method for forming a semiconductor device is provided to prevent a collapse of a fence by forming a fence with unevenness in a boundary part of impurity regions of first and second conductivity types. An interlayer dielectric(33) is formed on a semiconductor substrate(31) having an underlying structure. The interlayer dielectric is etched by a photolithography process using an exposure mask for implanting impurity ions of first conductivity type. The interlayer dielectric is etched by a photolithography process using an exposure mask for implanting impurity ions of second conductivity type to form a fence(39) with a planar structure of an unevenness type on a boundary part between the impurity regions of first and second conductivity types. The fence can be an uneven type with the same CD(critical dimension).
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