| 摘要 |
A phase shift mask and a manufacturing method thereof are provided to enhance image contrast and resolution by forming an auxiliary exposure forming region at a peripheral portion of an exposure forming region using an absorbing layer interposed between a phase shift pattern and a reflective coating. A reflective coating(120) is formed on a substrate(100). A phase shift pattern(135) is formed on the reflective coating. An absorbing layer is interposed between the phase shift pattern and the reflective coating. An absorbing pattern(145) is obtained from the resultant structure by removing a portion of the absorbing layer therefrom, wherein the absorbing layer portion is spaced apart from a sidewall of the phase shift pattern. The reflective coating is composed of Mo and Si layers. The absorbing layer is made of one selected from a group consisting of TiN, Cr, NiSi, Ti TaSN and Al.
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