| 摘要 |
A simulation method of an exposure process is provided to improve the yield of a semiconductor device and reliability by using a blurring operation to predict a reflow result of photoresist. A profile of a photoresist pattern for processing a photoresist reflow process is obtained(S110). The obtained profile is transformed into a binary value(S120). A blurring operation is applied to the obtained profile of the photoresist pattern to predict a reflow result of photoresist(S130,S140). When the obtained profile is transformed into the binary value, regions in the obtained profile are discriminated based on existence of the photoresist pattern. Different binary values are assigned to the regions where the photoresist pattern does not exist.
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