| 摘要 |
A crystallization method is provided to minimize the contamination of a silicon thin film by crystallizing a silicon thin film while using minimum catalyst metal. An amorphous silicon thin film is formed on a substrate. A metal layer is formed on the amorphous silicon thin film. A heat treatment is performed on the substrate at a first temperature for a time interval of t1 to form a seed on the amorphous silicon thin film. A heat treatment is performed in an atmosphere of oxidation on the substrate at a second temperature for a time interval of t2 to crystallize the amorphous silicon thin film. The metal layer can be transition metal including nickel.
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