ETCHING METHOD OF SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF ISOLATION IN SEMICONDUCTOR

摘要

A method for etching a semiconductor device is provided to easily change the temperature of a substrate by varying the flowrate of gas flowing through the substrate. A substrate(10) is placed on a chuck(102). The substrate is selectively etched by an etch process to form a trench. H3 gas is supplied to an opposite surface of the chuck to the surface of the chuck on which the substrate is placed so that the inclination of the sidewall of the trench is adjusted. The temperature of a plasma etching apparatus increases as the flowrate of gas decreases.